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| Datasheet File OCR Text: |
| smb plastic-encapsulate diodes features 1 h igh diode semiconductor smb thyristor surge suppressors low switching voltage low on-state voltage does not degrade surge capability after multiple surge events within limit fails short circuit when sur ged in excess of ratings low capacitance protect circuit applications parameter storage temperature range operating junction temperature range repetitive peak pulse current parameter symbol value storage temperature range t stg - 60 to +150 junction temperature range t j - 40 to +150 repetitive peak pulse current i pp 100 value unit 60 to +150 40 to +150 100 a symbol parameter v d rm peak off - state voltage i drm off - state current v s switching voltage i s switching current v t on - state voltage i t on - state current i h holding current c o off - state capacitance parameter state voltage state current switching voltage switching current state voltage state current state capacitance v - i curve -i +i -v i t i drm v i s i h +v v t v drm v s c pxxxxs c series
h l j k ' l r g h 6 h p l f r q g x f w r u electrical characteristics . ' % " 1 , ? 2 " 1 , 2 ? 2 ? 4 / , ( @ 2 2 2 = = a = 7 < 6 7 a = = 9 6 6 b = < = 3 a = 6 6 = 7 a b = a = = 9 6 6 b = < = 6 6 = b = = 7 6 7 9 = a = = 9 6 6 b = < = = b = < 9 = 7 7 a ; ; a = = 9 6 6 6 = < = = < = ; 6 = 7 < 7 a ; a = = 9 6 6 6 = 7 = = ; = c = = 7 ; 7 c a a = = 9 6 6 6 = 7 = = c = = 7 c = b = a = = 9 6 6 6 = 7 = b = = 7 6 = < = a = = 9 6 6 6 = 7 = b 7 = = 7 9 = a = a = = 9 6 6 6 = 9 7 7 a = = 7 ; = 6 6 = a = = 9 6 6 6 = 9 7 a 6 b = = 7 c = 6 < = a = = 9 6 6 6 = 9 = 6 b 6 < = = 7 6 6 = b = = a = = 9 6 6 6 = 9 = 6 < b = = 7 6 ; 7 b 7 = a = = 9 6 6 6 = b 7 b b 7 = = 7 b 6 = 9 = = a = = 9 6 6 6 = b 7 b 7 b a = = 7 b 9 = 9 7 = a = = 9 6 6 6 = b 7 b a 2 ' = = d 2 ! / 3 ' 2 " 5 6 2 2 1 , 5 2 5 , 4 e * + 6 f = ' a f 6 = ' = f b < = ' = f = = = ' 7 = = 9 = = ; 7 = = surge ratings t ypical characteristics 3 h igh diode semiconductor fig.1: tr td pulse waveform %i pp 0 100 50 t r t d t( s) 0 peak value tr = rise time to peak value td = decay time to half value half value fig.2: reflow condition temperature 25 t s(min) t s(max) t l t p tp t l time to peak temperatue time ( t 2 5 t o p e a k ) ramp-up ramp-down preheat critical zone t l to t p t s fig.3: normalized vs change vs. junction temperature fig.4: normalized dc holding current vs. case temperature i h (t j )/i h (t j = 2 5 ) 0.4 -40 -20 0 20 40 60 80 100 120 140 160 t j ( ) -8 percent of vs change(%) 2.0 1.2 4 0 8 12 t c ( ) -4 -40 -20 0 20 40 60 80 100 120 140 160 0.8 1.6 0.6 1.0 1.4 1.8 2 5 2 5 4 jshd jshd h igh diode semiconductor dimensions in inches and (millimeters) 0.087 (2.20) 0.071 (1.80) 0.180(4.57) 0.160(4.06) 0.155(3.94) 0.130(3.30) 0.060(1.52) 0.030(0.76) 0.220(5.59) 0.205(5.21) 0.012(0.305) 0.006(0.152) 0.008(0.203)max. 0.096(2.44) 0.084(2.13) 4.26 1.8 smb smb 5 reel taping specifications for surface mount devices-smb h igh diode semiconductor |
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